NXP and Hitachi Energy collaborate on power modules to accelerate adoption of silicon carbide in e-mobility
Source: Manufacturer's Contribution • Author: NXP •
In this collaboration, NXP's GD3160 isolated gate driver and Hitachi Energy RoadPak SiC power modules combine to bring efficient, reliable and functionally safe electronic powertrains to market faster
Shanghai, China – March 30, 2022 – NXP Semiconductors NV (NASDAQ: NXPI) announced a partnership with Hitachi Energy to accelerate the adoption of silicon carbide (SiC) power semiconductor modules for electric mobility . The partnership provides a more efficient, reliable and functionally safe SiC MOSFET-based solution for power inverters powered by NXP's advanced high-performance GD3160 isolated high-voltage gate drivers and Hitachi Energy RoadPak automotive SiC MOSFET power modules composition.
Product Importance
Electric vehicle manufacturers use SiC MOSFET power devices, which can achieve higher cruising range than traditional silicon IGBTs and improve the overall efficiency of the system. SiC MOSFET power devices with high-performance power semiconductor modules and isolated gate drivers enable faster switching with lower on-resistance and thermal losses, and shrink the size of electric vehicle (xEV) power drive inverters. size, reduce its cost, and reduce the required capacity of the battery pack, extending the vehicle's range.
Hitachi Energy's high-performance automotive power semiconductor modules, RoadPak, provide excellent heat dissipation and low stray inductance, and are durable enough to withstand harsh automotive application environments, factors that are integral to fully exploiting the full capabilities and benefits of SiC MOSFETs. For outstanding performance, the power module is combined with NXP's GD3160 high-voltage isolated gate driver for fast, reliable switching and fault protection.
Robert Li, vice president and general manager of the Drivers and Energy Systems product line at NXP, said: "By partnering with Hitachi Energy, we were able to highlight the efficiency and range benefits of SiC MOSFETs in e-mobility. Our solution combines NXP's GD3160 with Hitachi Energy's RoadPak SiC modules can shorten the transition time from evaluation to performance optimization of SiC MOSFET-driven motor inverters."
Hitachi Energy leverages its technology and experience in industry and transportation to develop high-density RoadPak automotive SiC power modules suitable for e-mobility applications. RoadPak Half-Bridge Power Modules integrate 1200V SiC MOSFETs, integrated cooling pin-fin heatsinks and low inductance connections in a small form factor. The module supports a wide range of applications such as electric buses, electric passenger cars, and high-performance Formula E racing cars.
Rainer Kaesmaier, general manager of Hitachi Energy's semiconductor business, said: "We are delighted to partner with NXP Semiconductors to improve the performance of e-mobility with faster low-loss switching. Our joint solution is based on NXP's gate cells and Hitachi Energy's SiC RoadPak, built on our industry-leading experience and innovative technologies, helps extend the range of electric vehicles, reduce global carbon emissions, and drive sustainable mobility around the world."
