Transphorm releases simulation model for industry's first 1200-volt GaN-on-Sapphire device
Transphorm releases simulation model for industry's first 1200-volt GaN-on-Sapphire device
Keywords: Transphorm 1200V GaN-on-Sapphire device Simulation model time: 2023-05-31 Source: Transphorm
"Transphorm, Inc. announced the release of its 1200V power transistor simulation model and initial specifications. The TP120H070WS power transistor is the only 1200V GaN-on-Sapphire power semiconductor launched so far, leading similar products. The release of this product Demonstrates Transphorm's ability to support future automotive power systems, as well as three-phase power systems already commonly used in industrial, datacom and renewable energy markets."
The device is ready: for Transphorm's innovative normally-off GaN platform for next-generation automotive and three-phase power systems
Transphorm, Inc. (Nasdaq: TGAN), a pioneer and global supplier of high-reliability, high-performance gallium nitride (GaN) power conversion products, announced the availability of simulation models and initial specifications for its 1200-volt power transistors. The TP120H070WS power transistor is the only 1200V GaN-on-Sapphire power semiconductor launched so far, leading similar products. This product announcement demonstrates Transphorm's ability to support future automotive power systems, as well as three-phase power systems already commonly used in industrial, datacom and renewable energy markets. These applications can benefit from the higher power density and superior reliability of 1200V GaN devices, equivalent or superior performance, and more reasonable cost than alternative technologies. Transphorm has recently demonstrated higher performance of GaN devices in a 5kW 900V buck converter at 100kHz switching frequency. The 1200 V GaN device achieved 98.7% efficiency, surpassing production SiC MOSFETs with similar ratings.
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The innovative 1200-volt technology also demonstrates Transphorm's leadership in GaN power conversion. Vertical integration, in-house epiwafer manufacturing capabilities, and proprietary process technology, combined with decades of engineering expertise, enable the company to bring to market the highest performing portfolio of GaN devices and There are significant differentiating advantages in three areas: manufacturability, ease of driving, ease of design and reliability.
At PCIM 2023, May 9-11, Transphorm also published information on 1200-volt devices.
Preliminary Device Specifications and How to Obtain Samples
Transphorm's 1200-volt technology is based on proven processes and proven technology to meet customer requirements for reliability. The GaN-on-Sapphire process is currently in mass production in the LED market. In addition, the 1200-volt technology leverages the superior performance, normally-off GaN platform used in Transphorm's current device portfolio.
The main specifications of the TP120H070WS device include:
• Internal resistance 70 milliohms
• Normally closed
• Efficient bidirectional conduction
• Maximum ±20V gate voltage
• 4 V gate drive low noise
• Zero QRR reverse recovery charge
• 3-pin TO-247 package
We recommend using Verilog-A device models with the SIMetrix Pro v8.5 circuit simulator. The LTSpice model is under development and will be released in the fourth quarter of 2023. Simulation modeling facilitates fast and efficient power system design verification while reducing design iterations, development time, and hardware investment.
Device model files and data sheets can be downloaded here: https://www.transphormusa.com/en/products/#models.
Samples of 1200V power tubes are expected to be available in the first quarter of 2024.
Applications of Transphorm GaN Power Devices in Automotive Powertrain and Charging Ecosystem
1200V GaN devices are not only ideal solutions for various market applications, but also provide unique advantages for automotive systems.
The electric vehicle industry, especially at the higher kilowatt nodes of larger vehicles, will move towards 800-volt batteries in the second half of this decade. Therefore, a 1200 volt power transfer switch will be used to provide the required level of performance. Therefore, Transphorm's 1200-volt platform will definitely play a role in the field of next-generation on-board chargers, DC-DC converters, drive inverters and charging pile systems.
For electric vehicles currently using 400-volt batteries, Transphorm can provide 650-volt normally-off SuperGaN® power transistor solutions. These power devices are AEC-Q101 qualified, can withstand high temperatures up to 175°C, and are already in mass production.
Umesh Mishra, Chief Technology Officer and Co-Founder of Transphorm, said: "We are the leading power semiconductor company demonstrating and delivering on the promise of GaN. Transphorm's expertise brings to market high-performance GaN devices that are always on the go. Setting new standards in power density, performance and system cost. Our 1200-volt technology is a testament to the innovative vision and determination of the Transphorm engineering team. We are proving that GaN can easily be used in markets where SiC was previously specified Make a difference. For our business and GaN technology, it opens up a wide range of potential market applications."
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs, manufactures and markets high-performance, high-reliability GaN semiconductor power devices for high-voltage power conversion applications. Transphorm has one of the largest power GaN intellectual property portfolios, with more than 1,000 patents held or licensed, and is the first in the industry to produce high-voltage GaN semiconductor devices that are JEDEC and AEC-Q101 qualified.
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