Vishay Introduces New Third-Generation 650 V SiC Schottky Diodes
Vishay Introduces New Third-Generation 650 V SiC Schottky Diodes to Improve Energy Efficiency and Reliability in Switching Power Supply Designs
Key words: Vishay Schottky diode Switching power supply design time: 2023-06-02 Source: Vishay
"A few days ago, Vishay Intertechnology, Inc. announced the launch of 17 new third-generation 650 V silicon carbide (SiC) Schottky diodes. Vishay Semiconductors devices are designed with a hybrid PIN Schottky (MPS) structure with high surge current protection capabilities, Low forward voltage drop, capacitive charge, and reverse leakage current contribute to energy efficiency and reliability in switching power supply designs.
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The device adopts MPS structure design, rated current 4 A ~ 40 A, forward voltage drop, capacitive charge and reverse leakage current are low
A few days ago, Vishay Intertechnology, Inc. (NYSE: VSH) announced the launch of 17 new third-generation 650 V silicon carbide (SiC) Schottky diodes. Vishay Semiconductors devices are designed with a hybrid PIN Schottky (MPS) structure, which provides high inrush current protection, low forward voltage drop, capacitive charge, and reverse leakage current, which help improve the energy efficiency and reliability of switching power supply designs.
The new generation of SiC diodes released today includes 4A to 40A devices in TO-22OAC 2L and TO-247AD 3L plug-in packages and D2PAK 2L (TO-263AB 2L) surface mount packages. Due to the MPS structure, the forward voltage drop of the device is 0.3V lower than that of the previous generation solution, and the product of the forward voltage drop and the capacitor charge, which is the important figure of merit (FOM) of the power supply energy efficiency, is 17% lower than that of the previous generation solution.
Typical reverse leakage current of the diode is 30% lower at room temperature and 70% lower at elevated temperature compared to similar competing solutions. This reduces conduction losses and ensures high system efficiency during light and no-load periods. Unlike ultra-fast recovery diodes, third-generation devices have virtually no recovery tail, further improving efficiency.
Compared with silicon diodes with comparable breakdown voltages, SiC diodes have high thermal conductivity, low reverse current, and short reverse recovery time. The reverse recovery time of the diode is hardly affected by temperature changes, and it can operate at a high temperature of +175 °C without energy efficiency changes due to switching losses.
Typical applications for the devices include AC/DC Power Factor Correction (PFC) and DC/DC UHF output rectification in FBPS and LLC converters for power generation and exploration applications. The device has high reliability, is RoHS compliant, halogen-free, and has passed 2000 hours of high temperature reverse bias (HTRB) testing and 2000 thermal cycle temperature cycle tests. The test time and cycle times are twice that specified by AEC-Q101.
product number
VS-3C04ET07S2L-M3
VS-3C06ET07S2L-M3
VS-3C08ET07S2L-M3
VS-3C10ET07S2L-M3
VS-3C12ET07S2L-M3
VS-3C16ET07S2L-M3
VS-3C20ET07S2L-M3
VS-3C04ET07T-M3
VS-3C06ET07T-M3
VS-3C08ET07T-M3
VS-3C10ET07T-M3
VS-3C12ET07T-M3
VS-3C16ET07T-M3
Samples and production quantities of the new SiC diodes are available now, with lead times of eight weeks.
Introduction to VISHAY
Vishay is one of the world's largest manufacturers of a broad portfolio of discrete semiconductors and passive electronic components critical to innovative designs in the automotive, industrial, computing, consumer, communications, defense, aerospace and medical markets. Serving customers around the world, Vishay carries the DNA of technology——The DNA of tech.Ô. Vishay Intertechnology, Inc. is a Fortune 1,000 company listed on the New York Stock Exchange (VSH). For more information about Vishay, please visit www.vishay.com
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