- Manufacture :
- Series :
- Part Status :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
50,340
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ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 4A | 2.1V @ 4A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -65°C ~ 150°C | - | ||
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GET PRICE |
46,740
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|
ON Semiconductor | DIODE GEN PURP 600V 4A TO220-2L | Stealth™ | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 4A | 2.6V @ 4A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 150°C | - | ||
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56,540
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|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
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19,240
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|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 6A TO220-2L | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 35pF @ 650V, 1MHz | |||
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32,320
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|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | Stealth™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 8A | 2.6V @ 8A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | - | |||
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22,800
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|
ON Semiconductor | DIODE GEN PURP 600V 15A TO220-2L | Stealth™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 15A | 2.6V @ 15A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | - | - | |||
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69,400
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|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 12A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 90µA @ 170V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 65pF @ 650V, 1MHz | |||
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39,340
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|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 10A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - | |||
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37,580
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|
ON Semiconductor | DIODE GEN PURP 600V 30A TO220-2L | Stealth™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 30A | 2.6V @ 30A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -65°C ~ 150°C | - | |||
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28,220
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ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | STEALTH™ II | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 8A | 3.4V @ 8A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 32ns | -65°C ~ 150°C | - | |||
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47,200
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | DIODE GEN PURP 600V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Standard | 8A | 2.1V @ 8A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -65°C ~ 150°C | - |
