- Part Status :
- Packaging :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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22 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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32,660
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|
Microsemi Corporation | DIODE GEN PURP 800V 1A AXIAL | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 1.55V @ 1A | 500nA @ 800V | 800V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 150°C | - | |||
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61,660
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|
Microsemi Corporation | DIODE GEN PURP 150V 2A AXIAL | Military, MIL-PRF-19500/503 | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | A-PAK | Standard | 2A | 1.5V @ 37.7A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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42,860
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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22,800
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|
Microsemi Corporation | DIODE GEN PURP 150V 2.5A AXIAL | - | Discontinued at Digi-Key | Cut Tape (CT) | Through Hole | A, Axial | A-PAK | Standard | 2.5A | 875mV @ 1A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | - | |||
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36,120
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|
Microsemi Corporation | DIODE GEN PURP 150V 2.5A AXIAL | - | Active | Tape & Reel (TR) | Through Hole | A, Axial | A-PAK | Standard | 2.5A | 875mV @ 1A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | - | |||
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51,360
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|
Microsemi Corporation | DIODE GEN PURP 990V 1A A-PAK | - | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 18V @ 500mA | 500nA @ 900V | 990V | Standard Recovery >500ns, > 200mA (Io) | 60ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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78,900
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|
Microsemi Corporation | DIODE GEN PURP 50V 1.3A AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1.3A | 1.76V @ 18.8A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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13,560
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|
Microsemi Corporation | DIODE GEN PURP 100V 1.3A AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1.3A | 1.76V @ 18.8A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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54,160
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|
Microsemi Corporation | DIODE GEN PURP 150V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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55,500
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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74,300
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|
Microsemi Corporation | DIODE GEN PURP 150V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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78,000
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|
Microsemi Corporation | DIODE GEN PURP 990V 1A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 1.55V @ 1A | 500nA @ 990V | 990V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 150°C | - | ||||
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43,420
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|
Microsemi Corporation | DIODE GEN PURP 880V 1A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 1.55V @ 1A | 500nA @ 880V | 880V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 150°C | - | ||||
|
69,300
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
|
12,900
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|
Microsemi Corporation | DIODE GEN PURP 100V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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24,320
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|
Microsemi Corporation | DIODE GEN PURP 150V 1.3A AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1.3A | 1.76V @ 18.8A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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46,460
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|
Microsemi Corporation | DIODE GEN PURP 600V 1.75A AXIAL | - | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1.75A | 1.35V @ 2A | 2µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -65°C ~ 150°C | - | ||||
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13,960
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|
Microsemi Corporation | DIODE GEN PURP 1.1KV 1A D5A | Military, MIL-PRF-19500/585 | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 1.75V @ 1A | 1µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | - | |||
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52,980
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|
Microsemi Corporation | DIODE GEN PURP 150V 3A AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 3A | 2.04V @ 9.4A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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62,060
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|
Microsemi Corporation | DIODE GEN PURP 100V 3A AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 3A | 2.04V @ 9.4A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||||
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20,540
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|
Microsemi Corporation | DIODE GEN PURP 600V 1.2A AXIAL | - | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1.2A | 1.4V @ 1.2A | 500nA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -65°C ~ 150°C | - | ||||
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35,180
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|
Microsemi Corporation | DIODE GEN PURP 200V 1A AXIAL | Military, MIL-PRF-19500/429 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 1.6V @ 3A | 500nA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | 45pF @ 12V, 1MHz |