- Series :
- Packaging :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Reverse Recovery Time (trr) :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
207 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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45,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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19,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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29,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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39,240
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 90V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Schottky | 1A | 800mV @ 1A | 100µA @ 90V | 90V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
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35,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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34,780
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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19,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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40,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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49,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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35,100
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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41,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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24,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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24,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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43,660
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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39,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.7V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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29,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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19,480
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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27,320
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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34,880
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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24,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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40,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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50,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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45,920
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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36,880
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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70,940
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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74,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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38,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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45,800
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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38,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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38,740
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 1000V | - | Fast Recovery = 200mA (Io) | 500ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz |
