- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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59,120
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|
Infineon Technologies | DIODE GEN PURP 600V 60A TO247-3 | - | Not For New Designs | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 60A (DC) | 2V @ 30A | 40µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 143ns | -40°C ~ 175°C | - | |||
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GET PRICE |
49,500
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|
Global Power Technologies Group | DIODE SCHOTT 1.2KV 60A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.7V @ 60A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 3581pF @ 1V, 1MHz | ||
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GET PRICE |
56,500
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|
Global Power Technologies Group | DIODE SCHOTT 1.2KV 60A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.7V @ 60A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 3581pF @ 1V, 1MHz | ||
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50,380
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|
Microsemi Corporation | DIODE SCHOTTKY 100V 60A DO5 | - | Active | Bulk | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | Schottky | 60A (DC) | - | 1mA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -65°C ~ 175°C | - | |||
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36,160
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|
Infineon Technologies | DIODE GEN PURP 600V 60A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 60A (DC) | 2V @ 30A | 40µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 143ns | -40°C ~ 175°C | - | |||
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48,240
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|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | |||
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36,440
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|
Microsemi Corporation | DIODE SCHOTTKY 30V 60A DO203AB | - | Active | Bulk | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | Schottky | 60A (DC) | 480mV @ 60A | 5mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -65°C ~ 150°C | - | |||
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68,800
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|
ON Semiconductor | 650V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.75V @ 50A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2530pF @ 1V, 100kHz | |||
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48,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 64ns | -40°C ~ 175°C | - |
