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28 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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73,280
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Infineon Technologies | DIODE SCHOTTKY 650V 12A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 360pF @ 1V, 1MHz | ||
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27,360
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 12A (DC) | 1.8V @ 12A | 2.1mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | ||
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33,540
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Infineon Technologies | DIODE SCHOTTKY 650V 12A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | ||
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33,020
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 500µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | ||
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74,700
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Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 12A (DC) | 2.1V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | ||
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47,980
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|
Infineon Technologies | DIODE SCHOTTKY 600V 12A TO252-3 | thinQ!™ | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 12A (DC) | 2.1V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | ||
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15,380
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|
Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 160µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 530pF @ 1V, 1MHz | ||
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22,400
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Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | |||
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47,960
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Infineon Technologies | DIODE SCHOTTKY 650V 12A TO263-2 | thinQ!™ | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 12A (DC) | 1.8V @ 12A | - | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | |||
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74,020
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 360pF @ 1V, 1MHz | |||
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20,580
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Global Power Technologies Group | DIODE SCHOTTKY 600V 12A TO263-2 | Amp+™ | Active | Cut Tape (CT) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Silicon Carbide Schottky | 12A (DC) | 1.65V @ 12A | 40µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 632pF @ 1V, 1MHz | |||
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45,620
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NXP USA Inc. | DIODE GEN PURP 1.5KV 12A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 12A (DC) | 1.3V @ 6.5A | - | 1500V | Fast Recovery = 200mA (Io) | 350ns | 150°C (Max) | - | ||
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30,620
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|
NXP USA Inc. | DIODE GEN PURP 1.5KV 12A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 12A (DC) | 1.3V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 350ns | 150°C (Max) | - | ||
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75,620
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|
Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 12A (DC) | 2.1V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
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18,080
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Global Power Technologies Group | DIODE SCHOTTKY 600V 12A TO263-2 | Amp+™ | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 487pF @ 1V, 1MHz | |||
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48,700
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|
Global Power Technologies Group | DIODE SCHOTTKY 650V 12A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 12A (DC) | 1.65V @ 12A | 120µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 632pF @ 1V, 1MHz | |||
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35,380
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|
Infineon Technologies | DIODE SCHOTTKY 600V 12A TO252-3 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 12A (DC) | 2.1V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
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GET PRICE |
53,900
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|
Global Power Technologies Group | DIODE SCHOTTKY 600V 12A TO220-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 487pF @ 1V, 1MHz | ||
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GET PRICE |
32,920
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|
Infineon Technologies | DIODE SCHOTTKY 600V 12A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 400µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 450pF @ 1V, 1MHz | ||
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67,680
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | |||
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22,460
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Infineon Technologies | DIODE SCHOTKY 650V 12A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | |||
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69,400
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 12A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 90µA @ 170V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 65pF @ 650V, 1MHz | |||
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70,560
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Rohm Semiconductor | DIODE SCHOTTKY 650V 12A TO263AB | Automotive, AEC-Q101 | Active | Digi-Reel® | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Silicon Carbide Schottky | 12A (DC) | 1.55V @ 12A | 240µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 438pF @ 1V, 1MHz | ||
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42,160
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Rohm Semiconductor | DIODE SCHOTTKY 650V 12A TO263AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Silicon Carbide Schottky | 12A (DC) | 1.55V @ 12A | 240µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 438pF @ 1V, 1MHz | |||
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76,720
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Rohm Semiconductor | DIODE SCHOTTKY 650V 12A TO263AB | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | Silicon Carbide Schottky | 12A (DC) | 1.55V @ 12A | 240µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 438pF @ 1V, 1MHz | |||
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78,460
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Rohm Semiconductor | DIODE SCHOTTKY 650V 12A TO-220-2 | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 12A (DC) | 1.55V @ 12A | 240µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 438pF @ 1V, 1MHz | |||
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49,920
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Rohm Semiconductor | DIODE SCHOTTKY 650V 12A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 12A (DC) | 1.55V @ 12A | 240µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 438pF @ 1V, 1MHz | |||
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18,360
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A TO220-2 | - | Active | - | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 12A (DC) | 1.35V @ 4A | 14µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 205pF @ 1V, 1MHz |
