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- Series :
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- Package / Case :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
79,220
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 7.5A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 380pF @ 1V, 1MHz | ||
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GET PRICE |
22,580
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|
Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 7.5A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 380pF @ 1V, 1MHz | ||
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GET PRICE |
62,520
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|
Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A TO220 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 7.5A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 380pF @ 1V, 1MHz | ||
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GET PRICE |
20,260
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 7.5A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 7.5A (DC) | 1.6V @ 7.5A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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GET PRICE |
60,960
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A TO247 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 10A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 375pF @ 1V, 1MHz | ||
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77,800
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|
Infineon Technologies | DIODE GEN PURP 1.2KV 7.5A WAFER | - | Active | - | - | - | - | Standard | 7.5A (DC) | 1.97V @ 7.5A | 27µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | - | |||
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25,380
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|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 6A TO220-F2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220-F2 | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 6A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 294pF @ 0V, 1MHz |
