- Part Status :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
66,220
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | ||
|
|
GET PRICE |
35,960
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | DIODE GEN PURP 1.2KV 23A TO220-2 | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Standard | 23A (DC) | 2.15V @ 9A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 140ns | -55°C ~ 150°C | - | ||
|
|
53,060
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | 650V 30A SIC SBD | Active | - | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 23A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 887pF @ 1V, 100kHz | |||
|
|
|
73,300
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | 650V 16A SIC SBD | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 23A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 887pF @ 1V, 100kHz |
