- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
42,860
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||
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GET PRICE |
68,820
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|
NXP USA Inc. | DIODE AVALANCHE 200V 850MA MELF | - | Obsolete | Cut Tape (CT) | Surface Mount | SOD-87 | MELF | Avalanche | 850mA | 980mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | 50pF @ 0V, 1MHz | ||
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GET PRICE |
41,780
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|
NXP USA Inc. | DIODE AVALANCHE 200V 850MA MELF | - | Obsolete | Tape & Reel (TR) | Surface Mount | SOD-87 | MELF | Avalanche | 850mA | 980mV @ 1A | 1µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | 50pF @ 0V, 1MHz | ||
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GET PRICE |
15,700
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|
NXP USA Inc. | DIODE AVALANCHE 100V 850MA MELF | - | Obsolete | Cut Tape (CT) | Surface Mount | SOD-87 | MELF | Avalanche | 850mA | 980mV @ 1A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | 50pF @ 0V, 1MHz | ||
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GET PRICE |
39,160
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|
NXP USA Inc. | DIODE AVALANCHE 100V 850MA MELF | - | Obsolete | Tape & Reel (TR) | Surface Mount | SOD-87 | MELF | Avalanche | 850mA | 980mV @ 1A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | 50pF @ 0V, 1MHz | ||
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54,160
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|
Microsemi Corporation | DIODE GEN PURP 150V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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16,740
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|
Semtech Corporation | DIODE GEN PURP 800V 850MA AXIAL | - | Active | Bulk | Through Hole | Axial | - | Standard | 850mA | 1.35V @ 1.5A | 1µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 300ns | - | 18pF @ 5V, 1MHz | |||
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55,500
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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74,300
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|
Microsemi Corporation | DIODE GEN PURP 150V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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78,260
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|
Microsemi Corporation | DIODE GEN PURP 100V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A, Axial | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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28,220
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|
Semtech Corporation | DIODE GEN PURP 1KV 850MA AXIAL | - | Active | Bulk | Through Hole | Axial | - | Standard | 850mA | 1.35V @ 1.5A | 1µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 300ns | - | 18pF @ 5V, 1MHz | |||
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69,300
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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12,900
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|
Microsemi Corporation | DIODE GEN PURP 100V 850MA AXIAL | Military, MIL-PRF-19500/503 | Active | Bulk | Through Hole | A, Axial | A-PAK | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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GET PRICE |
13,520
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|
Microsemi Corporation | DIODE GEN PURP 50V 850MA AXIAL | - | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | - | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | ||
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66,180
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|
Microsemi Corporation | DIODE GEN PURP 150V 850MA AXIAL | - | Active | Bulk | Through Hole | A, Axial | - | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - | |||
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66,420
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|
Microsemi Corporation | DIODE GEN PURP 100V 850MA AXIAL | - | Active | Bulk | Through Hole | A, Axial | - | Standard | 850mA | 2.04V @ 9.4A | 1µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 30ns | -65°C ~ 155°C | - |
