- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,540
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | DIODE SCHOTTKY 600V 17A ISOPLUS | HiPerDyn™ | Active | Tube | Through Hole | ISOPLUS247™ | ISOPLUS247™ | Schottky | 17A | 3.32V @ 15A | 500µA @ 600V | 600V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | - | |||
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70,140
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | DIODE GEN PURP 1.2KV 17A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 17A | 2.15V @ 12A | 750µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 60ns | -40°C ~ 150°C | - | |||
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66,840
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 17A | 1.8V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz |
