Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRLHS6276TR2PBF
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RFQ
43,380
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Infineon Technologies MOSFET 2N-CH 20V 4.5A PQFN HEXFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 1.5W 6-PQFN Dual (2x2) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 45 mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V 310pF @ 10V
IRLHS6276TR2PBF
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RFQ
25,960
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Infineon Technologies MOSFET 2N-CH 20V 4.5A PQFN HEXFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 1.5W 6-PQFN Dual (2x2) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 45 mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V 310pF @ 10V
IRFHS9351TR2PBF
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RFQ
45,560
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Infineon Technologies MOSFET 2P-CH 30V 2.3A PQFN HEXFET® Obsolete Digi-Reel® -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 1.4W 6-PQFN Dual (2x2) 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 170 mOhm @ 3.1A, 10V 2.4V @ 10µA 3.7nC @ 10V 160pF @ 25V
IRFHS9351TR2PBF
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RFQ
58,640
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET 2P-CH 30V 2.3A PQFN HEXFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 1.4W 6-PQFN Dual (2x2) 2 P-Channel (Dual) Logic Level Gate 30V 2.3A 170 mOhm @ 3.1A, 10V 2.4V @ 10µA 3.7nC @ 10V 160pF @ 25V
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