- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
52,500
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Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | ||
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78,900
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|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
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30,480
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|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
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GET PRICE |
69,340
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|
Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | ||
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71,580
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|
Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | |||
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34,520
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|
Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | |||
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GET PRICE |
26,940
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|
Infineon Technologies | MOSFET 2N-CH 50V 3A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | ||
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69,100
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|
Infineon Technologies | MOSFET 2N-CH 50V 3A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | |||
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29,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET 2N-CH 50V 3A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | |||
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GET PRICE |
75,840
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|
Infineon Technologies | MOSFET N/P-CH 20V 8TDSON | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 2.5W | PG-TSDSON-8-FL | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55 mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | ||
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35,360
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|
Infineon Technologies | MOSFET N/P-CH 20V 8TDSON | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 2.5W | PG-TSDSON-8-FL | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55 mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | |||
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33,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N/P-CH 20V 8TDSON | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 2.5W | PG-TSDSON-8-FL | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55 mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V |
