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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Per Unit
$8.37
RFQ
41,120
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET 2N-CH 75V 120A I4-PAC-5 HiPerFET™, TrenchT2™ Active Tube -55°C ~ 175°C (TJ) Through Hole i4-Pac™-5 170W ISOPLUS i4-PAC™ 2 N-Channel (Dual) Asymmetrical Standard 75V 120A 5.8 mOhm @ 100A, 10V 4V @ 250µA 178nC @ 10V 10500pF @ 25V
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