Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
Default Photo
Per Unit
$9.18
RFQ
42,860
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET 2N-CH 600V 12A I4-PAC HiPerFET™, PolarHT™ Active Tube -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 130W ISOPLUS i4-PAC™ 2 N-Channel (Dual) Standard 600V 12A 350 mOhm @ 11A, 10V 5V @ 1mA 58nC @ 10V 3600pF @ 25V
Default Photo
Per Unit
$8.40
RFQ
79,620
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET 2N-CH 500V 13A I4-PAC HiPerFET™, PolarHT™ Active Tube -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 132W ISOPLUS i4-PAC™ 2 N-Channel (Dual) Standard 500V 13A 270 mOhm @ 11A, 10V 5V @ 1mA 50nC @ 10V 2630pF @ 25V
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