Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Per Unit
$24.89
RFQ
63,500
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Microsemi Corporation MOSFET 4N-CH 1000V 19A SP3 POWER MOS 8™ Active Bulk -40°C ~ 150°C (TJ) Chassis Mount SP3 357W 4 N-Channel (H-Bridge) Standard 1000V (1kV) 19A 552 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 6800pF @ 25V
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RFQ
69,600
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET 2N-CH 500V 51A SP3 POWER MOS 8™ Obsolete Bulk -40°C ~ 150°C (TJ) Chassis Mount SP3 390W 2 N-Channel (Dual) Asymmetrical Standard 500V 51A 78 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 10800pF @ 25V
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