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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Per Unit
$7.30
RFQ
71,960
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IXYS MOSFET N/P-CH Active - -55°C ~ 150°C (TJ) Through Hole i4-Pac™-4, Isolated 89W, 132W ISOPLUS i4-PAC™ N and P-Channel, Common Drain Standard 100V 54A (Tc), 62A (Tc) 24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V 4V @ 250µA, 4.5V @ 250µA 197nC @ 10V, 104nC @ 10V 1370pF @ 25V, 5080pF @ 25V
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