- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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24 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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77,160
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|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 2300W | SP6 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 370A (Tc) | 10 mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | ||||
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67,460
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|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | Module | 2140W | Module | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 11 mOhm @ 180A, 20V | 3V @ 9mA | 1224nC @ 20V | 23000pF @ 1000V | ||||
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19,360
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|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 937W | SP3 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 148A (Tc) | 25 mOhm @ 80A, 20V | 3V @ 4mA | 544nC @ 20V | 10200pF @ 1000V | ||||
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68,520
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|
Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | 470W | SP1 | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A, 20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V | ||||
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56,300
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|
Vishay Siliconix | MOSFET DUEL N-CHAN 30V | TrenchFET® Gen IV | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) | 8-PowerPair® (6x5) | 2 N-Channel (Dual), Schottky | Standard | 30V | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V | 2.2V @ 250µA | 49nC @ 10V, 200nC @ 10V | 2000pF @ 15V, 8200pF @ 15V | |||
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43,780
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|
Vishay Siliconix | MOSFET DUEL N-CHAN 30V | TrenchFET® Gen IV | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) | 8-PowerPair® (6x5) | 2 N-Channel (Dual), Schottky | Standard | 30V | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V | 2.2V @ 250µA | 49nC @ 10V, 200nC @ 10V | 2000pF @ 15V, 8200pF @ 15V | ||||
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64,260
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|
Vishay Siliconix | MOSFET DUEL N-CHAN 30V | TrenchFET® Gen IV | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) | 8-PowerPair® (6x5) | 2 N-Channel (Dual), Schottky | Standard | 30V | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V | 2.2V @ 250µA | 49nC @ 10V, 200nC @ 10V | 2000pF @ 15V, 8200pF @ 15V | ||||
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38,620
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|
Infineon Technologies | MOSFET 2N-CH 25V 64A/188A PQFN | FASTIRFET™ | Discontinued at Digi-Key | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 31W, 63W | PQFN (5x6) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 25V | 64A, 188A | 3.2 mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | |||
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14,480
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|
Infineon Technologies | MOSFET 2N-CH 25V 64A/188A PQFN | FASTIRFET™ | Discontinued at Digi-Key | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 31W, 63W | PQFN (5x6) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 25V | 64A, 188A | 3.2 mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | |||
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52,040
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|
Infineon Technologies | MOSFET 2N-CH 25V 64A/188A PQFN | FASTIRFET™ | Not For New Designs | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 31W, 63W | PQFN (5x6) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 25V | 64A, 188A | 3.2 mOhm @ 30A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1314pF @ 13V | ||||
|
74,040
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | ||||
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26,400
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | ||||
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40,760
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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33,560
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | ||||
|
59,060
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.2W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 17.9A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | ||||
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GET PRICE |
20,020
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | |||
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61,460
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | ||||
|
42,380
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|
ON Semiconductor | MOSFET 2N-CH 30V 8DFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 1.1W, 1.16W | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 2 N-Channel (Dual), Schottky | Logic Level Gate | 30V | 10.3A, 13.3A | 6.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 9.7nC @ 4.5V | 1150pF @ 15V | ||||
|
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60,420
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|
Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 20W, 66W | 8-PowerPair® | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 35nC @ 4.5V | 930pF @ 15V, 4600pF @ 15V | |||
|
17,380
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|
Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 20W, 66W | 8-PowerPair® | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 35nC @ 4.5V | 930pF @ 15V, 4600pF @ 15V | ||||
|
68,960
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|
Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | TrenchFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 20W, 66W | 8-PowerPair® | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 35nC @ 4.5V | 930pF @ 15V, 4600pF @ 15V | ||||
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GET PRICE |
33,160
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|
Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | TrenchFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 20.2W, 32.9W | 8-PowerPair® | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 19.8nC @ 4.5V | 930pF @ 15V, 2620pF @ 15V | |||
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76,800
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|
Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 20.2W, 32.9W | 8-PowerPair® | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 19.8nC @ 4.5V | 930pF @ 15V, 2620pF @ 15V | ||||
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20,660
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|
Vishay Siliconix | MOSFET 2 N-CH 30V 8-POWERPAIR | TrenchFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 20.2W, 32.9W | 8-PowerPair® | 2 N-Channel (Dual), Schottky | Standard | 30V | 20A (Tc), 60A (Tc) | 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V | 2.2V @ 250µA | 8.1nC @ 4.5V, 19.8nC @ 4.5V | 930pF @ 15V, 2620pF @ 15V |