- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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44,620
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET 4N-CH 1200V 219A SP6C | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 925W | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 219A | 12 mOhm @ 150A, 20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V | |||
|
|
|
27,280
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET 4N-CH 1200V 55A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 250W | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 55A | 49 mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | |||
|
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19,820
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET 4N-CH 1200V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 125W | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 28A | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V |
