- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
67,720
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|
Microsemi Corporation | MOSFET 6N-CH 1000V 22A SP6-P | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 390W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | ||
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GET PRICE |
40,980
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|
Microsemi Corporation | MOSFET 2N-CH 1000V 22A SP3 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | ||
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37,360
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|
Microsemi Corporation | MOSFET 6N-CH 1000V 22A SP6P | POWER MOS 7® | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 390W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||
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14,020
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|
Microsemi Corporation | MOSFET 6N-CH 1000V 22A SP6-P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 390W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||
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69,820
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|
Microsemi Corporation | MOSFET 4N-CH 1000V 22A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 390W | SP4 | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||
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19,580
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|
Microsemi Corporation | MOSFET 4N-CH 1000V 22A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||
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57,500
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|
Microsemi Corporation | MOSFET 2N-CH 1000V 22A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | |||
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GET PRICE |
51,220
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|
Nexperia USA Inc. | MOSFET 2N-CH 60V 22A LFPAK56D | Automotive, AEC-Q101, TrenchMOS™ | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | 38W | LFPAK56D | 2 N-Channel (Dual) | Logic Level Gate | 60V | 22A | 32 mOhm @ 5A, 10V | 2.1V @ 1mA | 14.2nC @ 10V | 1081pF @ 25V | ||
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38,460
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|
Nexperia USA Inc. | MOSFET 2N-CH 60V 22A LFPAK56D | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | 38W | LFPAK56D | 2 N-Channel (Dual) | Logic Level Gate | 60V | 22A | 32 mOhm @ 5A, 10V | 2.1V @ 1mA | 14.2nC @ 10V | 1081pF @ 25V | |||
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12,100
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|
Nexperia USA Inc. | MOSFET 2N-CH 60V 22A LFPAK56D | Automotive, AEC-Q101, TrenchMOS™ | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | 38W | LFPAK56D | 2 N-Channel (Dual) | Logic Level Gate | 60V | 22A | 32 mOhm @ 5A, 10V | 2.1V @ 1mA | 14.2nC @ 10V | 1081pF @ 25V | |||
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GET PRICE |
22,540
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET 2N-CH 1000V 22A SP3 | POWER MOS 7® | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 390W | SP3 | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 22A | 420 mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V |
