Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BTS113AE3064NKSA1
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RFQ
33,440
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Infineon Technologies MOSFET N-CH 60V 11.5A TO-220AB TEMPFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 P-TO220AB 40W (Tc) N-Channel 60V 11.5A (Tc) 170 mOhm @ 5.8A, 4.5V 2.5V @ 1mA - 560pF @ 25V 4.5V ±10V
BTS113ANKSA1
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RFQ
71,260
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Infineon Technologies MOSFET N-CH 60V 11.5A TO-220AB TEMPFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 P-TO220AB 40W (Tc) N-Channel 60V 11.5A (Tc) 170 mOhm @ 5.8A, 4.5V 2.5V @ 1mA - 560pF @ 25V 4.5V ±10V
BTS115ANKSA1
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RFQ
29,520
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Infineon Technologies MOSFET N-CH 50V 15.5A TO-220AB TEMPFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 P-TO220AB 50W (Tc) N-Channel 50V 15.5A (Tc) 120 mOhm @ 7.8A, 4.5V 2.5V @ 1mA - 735pF @ 25V 4.5V ±10V
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