- Series :
- Part Status :
- Packaging :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71,220
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | ||
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20,740
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | ||
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GET PRICE |
69,220
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | ||
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52,420
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | ||
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31,880
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | |||
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49,260
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | |||
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55,520
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | U-MOSII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 30V | 1.4A (Ta) | 251 mOhm @ 650mA, 10V | 2.6V @ 1mA | - | 137pF @ 15V | 4V, 10V | ±20V | ||
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68,520
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | U-MOSII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 30V | 1.4A (Ta) | 251 mOhm @ 650mA, 10V | 2.6V @ 1mA | - | 137pF @ 15V | 4V, 10V | ±20V | |||
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74,580
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | U-MOSII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | 30V | 1.4A (Ta) | 251 mOhm @ 650mA, 10V | 2.6V @ 1mA | - | 137pF @ 15V | 4V, 10V | ±20V | |||
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GET PRICE |
19,620
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | ||
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43,940
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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78,580
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V |
