Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
9 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
EPC2015
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RFQ
19,320
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EPC TRANS GAN 40V 33A BUMPED DIE eGaN® Discontinued at Digi-Key Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 40V 33A (Ta) 4 mOhm @ 33A, 5V 2.5V @ 9mA 11.6nC @ 5V 1200pF @ 20V 5V +6V, -5V
EPC2015
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RFQ
18,860
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EPC TRANS GAN 40V 33A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 40V 33A (Ta) 4 mOhm @ 33A, 5V 2.5V @ 9mA 11.6nC @ 5V 1200pF @ 20V 5V +6V, -5V
EPC2015
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RFQ
14,780
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EPC TRANS GAN 40V 33A BUMPED DIE eGaN® Discontinued at Digi-Key Tape & Reel (TR) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 40V 33A (Ta) 4 mOhm @ 33A, 5V 2.5V @ 9mA 11.6nC @ 5V 1200pF @ 20V 5V +6V, -5V
EPC2001
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RFQ
43,500
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EPC TRANS GAN 100V 25A BUMPED DIE eGaN® Discontinued at Digi-Key Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 100V 25A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 10nC @ 5V 950pF @ 50V 5V +6V, -5V
EPC2001
Per Unit
$3.46
RFQ
62,500
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EPC TRANS GAN 100V 25A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 100V 25A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 10nC @ 5V 950pF @ 50V 5V +6V, -5V
EPC2001
Per Unit
$1.99
RFQ
16,900
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EPC TRANS GAN 100V 25A BUMPED DIE eGaN® Discontinued at Digi-Key Tape & Reel (TR) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 100V 25A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 10nC @ 5V 950pF @ 50V 5V +6V, -5V
EPC2001C
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RFQ
63,280
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EPC TRANS GAN 100V 36A BUMPED DIE eGaN® Active Digi-Reel® GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 100V 36A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 9nC @ 5V 900pF @ 50V 5V +6V, -4V
EPC2001C
Per Unit
$2.67
RFQ
18,040
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EPC TRANS GAN 100V 36A BUMPED DIE eGaN® Active Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 100V 36A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 9nC @ 5V 900pF @ 50V 5V +6V, -4V
EPC2001C
Per Unit
$1.23
RFQ
74,980
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EPC TRANS GAN 100V 36A BUMPED DIE eGaN® Active Tape & Reel (TR) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die Outline (11-Solder Bar) N-Channel - 100V 36A (Ta) 7 mOhm @ 25A, 5V 2.5V @ 5mA 9nC @ 5V 900pF @ 50V 5V +6V, -4V
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