Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
36 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM6J512NU,LF
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RFQ
27,740
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 10A UDFN6B U-MOSVII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 10A (Ta) 16.2 mOhm @ 4A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM6J512NU,LF
Per Unit
$0.30
RFQ
34,920
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 10A UDFN6B U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 10A (Ta) 16.2 mOhm @ 4A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM6J512NU,LF
Per Unit
$0.07
RFQ
43,540
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 10A UDFN6B U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 10A (Ta) 16.2 mOhm @ 4A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM6J502NU,LF(T
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RFQ
35,180
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J502NU,LF(T
Per Unit
$0.39
RFQ
27,600
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J502NU,LF(T
Per Unit
$0.12
RFQ
77,660
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 23.1 mOhm @ 4A, 4.5V 1V @ 1mA 24.8nC @ 4.5V 1800pF @ 10V 1.5V, 4.5V ±8V
SSM6J503NU,LF(T
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RFQ
12,940
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 32.4 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 10V 840pF @ 10V 1.5V, 4.5V ±8V
SSM6J503NU,LF(T
Per Unit
$0.29
RFQ
14,040
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 32.4 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 10V 840pF @ 10V 1.5V, 4.5V ±8V
SSM6J503NU,LF(T
Per Unit
$0.07
RFQ
25,380
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Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1W (Ta) P-Channel - 20V 6A (Ta) 32.4 mOhm @ 3A, 4.5V 1V @ 1mA 12.8nC @ 10V 840pF @ 10V 1.5V, 4.5V ±8V
SSM6K504NU,LF
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RFQ
12,700
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A UDFN6B U-MOSVII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 9A (Ta) 19.5 mOhm @ 4A, 10V 2.5V @ 100µA 4.8nC @ 4.5V 620pF @ 15V 4.5V, 10V ±20V
SSM6K504NU,LF
Per Unit
$0.23
RFQ
27,360
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A UDFN6B U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 9A (Ta) 19.5 mOhm @ 4A, 10V 2.5V @ 100µA 4.8nC @ 4.5V 620pF @ 15V 4.5V, 10V ±20V
SSM6K504NU,LF
Per Unit
$0.05
RFQ
48,100
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A UDFN6B U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 9A (Ta) 19.5 mOhm @ 4A, 10V 2.5V @ 100µA 4.8nC @ 4.5V 620pF @ 15V 4.5V, 10V ±20V
SSM6K514NU,LF
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RFQ
65,700
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 12A 6-UDFNB U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 40V 12A (Ta) 11.6 mOhm @ 4A, 10V 2.4V @ 100µA 7.5nC @ 4.5V 1110pF @ 20V 4.5V, 10V ±20V
SSM6K514NU,LF
Per Unit
$0.28
RFQ
47,880
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 12A 6-UDFNB U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 40V 12A (Ta) 11.6 mOhm @ 4A, 10V 2.4V @ 100µA 7.5nC @ 4.5V 1110pF @ 20V 4.5V, 10V ±20V
SSM6K514NU,LF
Per Unit
$0.09
RFQ
59,120
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 12A 6-UDFNB U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 40V 12A (Ta) 11.6 mOhm @ 4A, 10V 2.4V @ 100µA 7.5nC @ 4.5V 1110pF @ 20V 4.5V, 10V ±20V
SSM6K341NU,LF
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RFQ
14,960
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 60V 6A (Ta) 36 mOhm @ 4A, 10V 2.5V @ 100µA 9.3nC @ 10V 550pF @ 10V 4V, 10V ±20V
SSM6K341NU,LF
Per Unit
$0.27
RFQ
71,560
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 60V 6A (Ta) 36 mOhm @ 4A, 10V 2.5V @ 100µA 9.3nC @ 10V 550pF @ 10V 4V, 10V ±20V
SSM6K341NU,LF
Per Unit
$0.08
RFQ
61,880
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 60V 6A (Ta) 36 mOhm @ 4A, 10V 2.5V @ 100µA 9.3nC @ 10V 550pF @ 10V 4V, 10V ±20V
SSM6K361NU,LF
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RFQ
46,020
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 100V 3.5A (Ta) 69 mOhm @ 2A, 10V 2.5V @ 100µA 3.2nC @ 4.5V 430pF @ 15V 4.5V, 10V ±20V
SSM6K361NU,LF
Per Unit
$0.27
RFQ
58,440
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 100V 3.5A (Ta) 69 mOhm @ 2A, 10V 2.5V @ 100µA 3.2nC @ 4.5V 430pF @ 15V 4.5V, 10V ±20V
SSM6K361NU,LF
Per Unit
$0.08
RFQ
60,940
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE NCH U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 2.5W (Ta) N-Channel - 100V 3.5A (Ta) 69 mOhm @ 2A, 10V 2.5V @ 100µA 3.2nC @ 4.5V 430pF @ 15V 4.5V, 10V ±20V
SSM6J505NU,LF
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RFQ
15,080
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Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 12A (Ta) 12 mOhm @ 4A, 4.5V 1V @ 1mA 37.6nC @ 4.5V 2700pF @ 10V 1.2V, 4.5V ±6V
SSM6J505NU,LF
Per Unit
$0.31
RFQ
36,480
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Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 12A (Ta) 12 mOhm @ 4A, 4.5V 1V @ 1mA 37.6nC @ 4.5V 2700pF @ 10V 1.2V, 4.5V ±6V
SSM6J505NU,LF
Per Unit
$0.09
RFQ
12,360
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Toshiba Semiconductor and Storage MOSFET P CH 12V 12A UDFN6B U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 12A (Ta) 12 mOhm @ 4A, 4.5V 1V @ 1mA 37.6nC @ 4.5V 2700pF @ 10V 1.2V, 4.5V ±6V
SSM6J507NU,LF
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RFQ
76,760
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 10A 6UDFN U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 30V 10A (Ta) 20 mOhm @ 4A, 10V 2.2V @ 250µA 20.4nC @ 4.5V 1150pF @ 15V 4V, 10V +20V, -25V
SSM6J507NU,LF
Per Unit
$0.28
RFQ
41,800
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 10A 6UDFN U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 30V 10A (Ta) 20 mOhm @ 4A, 10V 2.2V @ 250µA 20.4nC @ 4.5V 1150pF @ 15V 4V, 10V +20V, -25V
SSM6J507NU,LF
Per Unit
$0.08
RFQ
29,160
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 10A 6UDFN U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 30V 10A (Ta) 20 mOhm @ 4A, 10V 2.2V @ 250µA 20.4nC @ 4.5V 1150pF @ 15V 4V, 10V +20V, -25V
SSM6K513NU,LF
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RFQ
58,640
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Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
SSM6K513NU,LF
Per Unit
$0.28
RFQ
69,920
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
SSM6K513NU,LF
Per Unit
$0.08
RFQ
25,000
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET NCH 30V 15A UDFNB U-MOSIX-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) N-Channel - 30V 15A (Ta) 8.9 mOhm @ 4A, 10V 2.1V @ 100µA 7.5nC @ 4.5V 1130pF @ 15V 4.5V, 10V ±20V
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