Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDFME2P823ZT
GET PRICE
RFQ
51,980
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET P-CH 20V 2.6A 6MICROFET PowerTrench® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.6A (Ta) 142 mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7nC @ 4.5V 405pF @ 10V 1.8V, 4.5V ±8V
FDFME2P823ZT
GET PRICE
RFQ
44,660
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET P-CH 20V 2.6A 6MICROFET PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.6A (Ta) 142 mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7nC @ 4.5V 405pF @ 10V 1.8V, 4.5V ±8V
FDFME2P823ZT
GET PRICE
RFQ
30,460
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET P-CH 20V 2.6A 6MICROFET PowerTrench® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) P-Channel Schottky Diode (Isolated) 20V 2.6A (Ta) 142 mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7nC @ 4.5V 405pF @ 10V 1.8V, 4.5V ±8V
FDFME3N311ZT
GET PRICE
RFQ
30,140
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 1.8A 6MICROFET PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) N-Channel Schottky Diode (Isolated) 30V 1.8A (Ta) 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 2.5V, 4.5V ±12V
FDFME3N311ZT
Per Unit
$0.40
RFQ
28,360
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 1.8A 6MICROFET PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) N-Channel Schottky Diode (Isolated) 30V 1.8A (Ta) 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 2.5V, 4.5V ±12V
FDFME3N311ZT
Per Unit
$0.12
RFQ
58,340
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 30V 1.8A 6MICROFET PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) N-Channel Schottky Diode (Isolated) 30V 1.8A (Ta) 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 2.5V, 4.5V ±12V
Page 1 / 1