- Mounting Type :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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56,180
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 40V 240A D2PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Wide Leads | TO-262-3 Wide | 375W (Tc) | N-Channel | - | 40V | 240A (Tc) | 1.4 mOhm @ 195A, 10V | 4V @ 250µA | 210nC @ 10V | 9450pF @ 32V | 10V | ±20V | |||
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76,500
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 40V 295A TO262WL | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Wide Leads | TO-262-3 Wide | 300W (Tc) | N-Channel | - | 40V | 240A (Tc) | 1.8 mOhm @ 187A, 10V | 4V @ 250µA | 225nC @ 10V | 7978pF @ 25V | 10V | ±20V | |||
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12,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 24V 240A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Wide Leads | TO-262-3 Wide | 300W (Tc) | N-Channel | - | 24V | 240A (Tc) | 1.3 mOhm @ 195A, 10V | 4V @ 250µA | 180nC @ 10V | 7630pF @ 19V | 10V | ±20V |
