- Series :
- Part Status :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
65,420
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 650V TO-247-3 | CoolMOS™ C7 | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247 | 227W (Tc) | N-Channel | - | 650V | 46A (Tc) | 45 mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | 4.34nF @ 400V | 10V | ±20V | ||
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48,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 650V 24A TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247 | 128W (Tc) | N-Channel | - | 650V | 24A (Tc) | 95 mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | 10V | ±20V | |||
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34,580
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 650V 46A TO247-4 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | PG-TO247 | 227W (Tc) | N-Channel | - | 650V | 46A (Tc) | 45 mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | 4340pF @ 400V | 10V | ±20V |
