Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
9 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD50R280CEAUMA1
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RFQ
58,040
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Infineon Technologies MOSFET N-CH 550V 18.1A TO252 CoolMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 119W (Tc) N-Channel - 550V 18.1A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
IPD50R280CEAUMA1
Per Unit
$0.85
RFQ
15,300
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Infineon Technologies MOSFET N-CH 550V 18.1A TO252 CoolMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 119W (Tc) N-Channel - 550V 18.1A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
IPD50R280CEAUMA1
Per Unit
$0.33
RFQ
22,080
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Infineon Technologies MOSFET N-CH 550V 18.1A TO252 CoolMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 119W (Tc) N-Channel - 550V 18.1A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V
IPD60R1K5CEAUMA1
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RFQ
76,600
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Infineon Technologies MOSFET N-CHANNEL 650V 5A TO252 CoolMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 49W (Tc) N-Channel - 650V 5A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPD60R1K5CEAUMA1
Per Unit
$0.37
RFQ
12,820
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Infineon Technologies MOSFET N-CHANNEL 650V 5A TO252 CoolMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 49W (Tc) N-Channel - 650V 5A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPD60R1K5CEAUMA1
Per Unit
$0.11
RFQ
19,640
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Infineon Technologies MOSFET N-CHANNEL 650V 5A TO252 CoolMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 49W (Tc) N-Channel - 650V 5A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPD50R500CEAUMA1
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RFQ
23,520
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Infineon Technologies MOSFET N-CH 550V 7.6A TO252 CoolMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 57W (Tc) N-Channel - 550V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IPD50R500CEAUMA1
Per Unit
$0.49
RFQ
39,960
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Infineon Technologies MOSFET N-CH 550V 7.6A TO252 CoolMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 57W (Tc) N-Channel - 550V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IPD50R500CEAUMA1
Per Unit
$0.17
RFQ
13,760
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Infineon Technologies MOSFET N-CH 550V 7.6A TO252 CoolMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO-252 57W (Tc) N-Channel - 550V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
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