- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
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10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
58,320
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GeneSiC Semiconductor | TRANS SJT 1700V 16A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | 1700V | 16A (Tc) (90°C) | 110 mOhm @ 16A | - | ||
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GET PRICE |
59,460
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GeneSiC Semiconductor | TRANS SJT 1.2KV 20A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | 1200V | 20A (Tc) | 70 mOhm @ 20A | - | ||
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GET PRICE |
54,540
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GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 170W (Tc) | 1200V | 10A (Tc) | 140 mOhm @ 10A | - | ||
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GET PRICE |
73,320
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|
GeneSiC Semiconductor | TRANS SJT 1200V 5A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | 1200V | 5A (Tc) | 280 mOhm @ 5A | - | ||
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GET PRICE |
30,500
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GeneSiC Semiconductor | TRANS SJT 1200V 6A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | - | 1200V | 6A (Tc) (90°C) | 220 mOhm @ 6A | - | ||
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GET PRICE |
27,300
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GeneSiC Semiconductor | TRANS SJT 1200V 3A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 15W (Tc) | 1200V | 3A (Tc) (95°C) | 460 mOhm @ 3A | - | ||
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46,060
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GeneSiC Semiconductor | TRANS SJT 1200V 45A TO247 | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | 1200V | 45A (Tc) | 50 mOhm @ 20A | 3091pF @ 800V | |||
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70,020
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GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | 1700V | 4A (Tc) (95°C) | 480 mOhm @ 4A | - | |||
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65,900
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GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 48W (Tc) | 1700V | 8A (Tc) (90°C) | 250 mOhm @ 8A | - | |||
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19,220
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GeneSiC Semiconductor | TRANS SJT 1.2KV 50A | - | Active | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 583W (Tc) | 1200V | 100A (Tc) | 25 mOhm @ 50A | 7209pF @ 800V |
