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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$6.09
RFQ
15,100
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 650V 20A 3PQFN - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Surface Mount 3-PowerDFN 3-PQFN (8x8) 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 14A, 8V 2.6V @ 300µA 42nC @ 8V 760pF @ 400V 8V ±18V
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