Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFJ80N25X3
Per Unit
$5.82
RFQ
22,760
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 250V 44A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISO TO-247-3 104W (Tc) N-Channel - 250V 44A (Tc) 18 mOhm @ 40A, 10V 4.5V @ 1.5mA 83nC @ 10V 5430pF @ 25V 10V ±20V
IXFJ20N85X
Per Unit
$5.36
RFQ
68,660
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 850V 9.5A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 ISO TO-247-3 110W (Tc) N-Channel - 850V 9.5A (Tc) 360 mOhm @ 10A, 10V 5.5V @ 2.5mA 63nC @ 10V 1660pF @ 25V 10V ±30V
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