Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDPF5N50TYDTU
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RFQ
71,440
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ON Semiconductor MOSFET N-CH 500V TO-220FP-3 UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F (LG-Formed) 28W (Tc) N-Channel - 500V 5A (Tc) 1.4 Ohm @ 2.5A, 10V 5V @ 250µA 15nC @ 10V 640pF @ 25V 10V ±30V
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Per Unit
$1.60
RFQ
12,220
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ON Semiconductor MOSFET N-CH 250V 44A TO-220F UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F (LG-Formed) 38W (Tc) N-Channel - 250V 44A (Tc) 69 mOhm @ 22A, 10V 5V @ 250µA 61nC @ 10V 2870pF @ 25V 10V ±30V
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