3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM6K781G,LF
GET PRICE
RFQ
23,160
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 12V 7A 6WCSP6C U-MOSVII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WCSPC (1.5x1.0) 1.6W (Ta) N-Channel - 12V 7A (Ta) 18 mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4nC @ 4.5V 600pF @ 6V 1.5V, 4.5V ±8V
SSM6K781G,LF
Per Unit
$0.31
RFQ
53,200
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 12V 7A 6WCSP6C U-MOSVII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WCSPC (1.5x1.0) 1.6W (Ta) N-Channel - 12V 7A (Ta) 18 mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4nC @ 4.5V 600pF @ 6V 1.5V, 4.5V ±8V
SSM6K781G,LF
Per Unit
$0.09
RFQ
22,200
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 12V 7A 6WCSP6C U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WCSPC (1.5x1.0) 1.6W (Ta) N-Channel - 12V 7A (Ta) 18 mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4nC @ 4.5V 600pF @ 6V 1.5V, 4.5V ±8V
Page 1 / 1