Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BFL4001-1EX
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RFQ
49,740
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ON Semiconductor MOSFET N-CH 900V 6.5A TO220 - Obsolete Tube MOSFET (Metal Oxide) 150°C (TA) Through Hole TO-220-3 Full Pack TO-220-3 Fullpack/TO-220F-3SG 2W (Ta), 37W (Tc) N-Channel 900V 6.5A (Ta) 2.7 Ohm @ 3.25A, 10V - 44nC @ 10V 850pF @ 30V 10V ±30V
BBL4001
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RFQ
66,180
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ON Semiconductor MOSFET N-CH 60V 74A TO220 - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 Fullpack/TO-220F-3SG 2W (Ta), 35W (Tc) N-Channel 60V 74A (Ta) 6.1 mOhm @ 37A, 10V 2.6V @ 1mA 135nC @ 10V 6900pF @ 20V 4V, 10V ±20V
BFL4001-1E
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RFQ
26,980
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ON Semiconductor MOSFET N-CH 900V 4.1A - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 Fullpack/TO-220F-3SG 2W (Ta), 37W (Tc) N-Channel 900V 4.1A (Tc) 2.7 Ohm @ 3.25A, 10V - 44nC @ 10V 850pF @ 30V 10V ±30V
BBL4001-1E
Per Unit
$1.50
RFQ
28,440
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ON Semiconductor MOSFET N-CH 60V 74A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 Fullpack/TO-220F-3SG 2W (Ta), 35W (Tc) N-Channel 60V 74A (Ta) 6.1 mOhm @ 37A, 10V 2.6V @ 1mA 135nC @ 10V 6900pF @ 20V 4V, 10V ±20V
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