Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDB8444TS
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RFQ
67,260
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ON Semiconductor MOSFET N-CH 40V 70A D2PAK-5 PowerTrench® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB TO-263-5 181W (Tc) N-Channel - 40V 20A (Ta), 70A (Tc) 5 mOhm @ 70A, 10V 4V @ 250µA 338nC @ 20V 8410pF @ 25V 10V ±20V
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14,900
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Infineon Technologies MOSFET N-CH 40V 59A D2PAK-5 HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-6, D²Pak (5 Leads + Tab), TO-263BA TO-263-5 130W (Tc) N-Channel - 40V 59A (Tc) 18 mOhm @ 35A, 10V 2V @ 250µA 50nC @ 5V 2190pF @ 25V 5V, 10V ±10V
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