Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFP56N30X3M
Per Unit
$3.78
RFQ
40,980
One step to sell excess stocks.Or submit Qty to get quotes
IXYS FET N-CHANNEL HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Overmolded 36W (Tc) N-Channel 300V 56A (Tc) 27 mOhm @ 28A, 10V 4.5V @ 1.5mA 56nC @ 10V 3750pF @ 25V 10V ±20V
IXTP8N70X2M
Per Unit
$1.46
RFQ
74,600
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CHANNEL 700V 4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Overmolded 32W (Tc) N-Channel 700V 4A (Tc) 550 mOhm @ 500mA, 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V 10V ±30V
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