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| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVIII-H | Active | - | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220SM(W) | 375W (Tc) | N-Channel | 100V | 160A (Ta) | 2.4 mOhm @ 80A, 10V | 3.5V @ 1mA | 122nC @ 10V | 10100pF @ 10V | 6V, 10V | ±20V |
