- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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53,680
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Microsemi Corporation | MOSFET N-CH 500V 75A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ | 1040W (Tc) | N-Channel | 500V | 75A (Tc) | 75 mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | 11600pF @ 25V | 10V | ±30V | ||
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73,660
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|
Microsemi Corporation | MOSFET N-CH 1200V 27A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ | 1135W (Tc) | N-Channel | 1200V | 27A (Tc) | 650 mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | 9670pF @ 25V | 10V | ±30V | |||
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GET PRICE |
63,680
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|
Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ | 520W (Tc) | N-Channel | 100V | 100A (Tc) | 11 mOhm @ 500mA, 10V | 4V @ 2.5mA | 450nC @ 10V | 10300pF @ 25V | 10V | ±30V | ||
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49,200
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Microsemi Corporation | MOSFET N-CH 500V 56A T-MAX | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ | 780W (Tc) | N-Channel | 500V | 56A (Tc) | 100 mOhm @ 28A, 10V | 5V @ 2.5mA | 220nC @ 10V | 8800pF @ 25V | 10V | ±30V |
