- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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23,840
One step to sell excess stocks.Or submit Qty to get quotes
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Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO262S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Short Leads, I²Pak | TO-262S (I2PAK) | 110W (Tc) | N-Channel | 800V | 5.5A (Tc) | 1.2 Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4nC @ 10V | 685pF @ 100V | 10V | ±30V | |||
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37,220
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | MOSFET N-CH 700V 8A TO262S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Short Leads, I²Pak | TO-262S (I2PAK) | 83W (Tc) | N-Channel | 700V | 8A (Tc) | 600 mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6nC @ 10V | 743pF @ 100V | 10V | ±30V |
