- Technology :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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23,040
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Rohm Semiconductor | MOSFET NCH 1.2KV 72A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 339W (Tc) | N-Channel | 1200V | 72A (Tc) | 39 mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131nC @ 18V | 2222pF @ 800V | 18V | +22V, -4V | |||
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34,760
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Rohm Semiconductor | MOSFET NCH 650V 93A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 339W (Tc) | N-Channel | 650V | 93A (Tc) | 28.6 mOhm @ 36A, 18V | 5.6V @ 18.2mA | 133nC @ 18V | 2208pF @ 500V | 18V | +22V, -4V | |||
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54,580
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Rohm Semiconductor | MOSFET NCH 1.2KV 55A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 262W (Tc) | N-Channel | 1200V | 55A (Tc) | 52 mOhm @ 20A, 18V | 5.6V @ 10mA | 107nC @ 18V | 1337pF @ 800V | 18V | +22V, -4V | |||
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67,680
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Rohm Semiconductor | MOSFET NCH 650V 70A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 262W (Tc) | N-Channel | 650V | 70A (Tc) | 39 mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | 1526pF @ 500V | 18V | +22V, -4V | |||
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50,900
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Rohm Semiconductor | MOSFET NCH 1.2KV 31A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 1200V | 31A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 60nC @ 18V | 785pF @ 800V | 18V | +22V, -4V | |||
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18,880
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Rohm Semiconductor | MOSFET NCH 650V 39A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 165W (Tc) | N-Channel | 650V | 39A (Tc) | 78 mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58nC @ 18V | 852pF @ 500V | 18V | +22V, -4V | |||
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27,180
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Rohm Semiconductor | MOSFET NCH 1.2KV 17A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 103W (Tc) | N-Channel | 1200V | 17A (Tc) | 208 mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | 398pF @ 800V | 18V | +22V, -4V | |||
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59,260
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Rohm Semiconductor | MOSFET NCH 650V 21A TO247N | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 103W (Tc) | N-Channel | 650V | 21A (Tc) | 156 mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38nC @ 18V | 460pF @ 500V | 18V | +22V, -4V | |||
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61,020
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Rohm Semiconductor | MOSFET N-CH 650V 30A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247N | 134W (Tc) | N-Channel | 650V | 30A (Tc) | 104 mOhm @ 10A, 18V | 5.6V @ 5mA | 48nC @ 18V | 571pF @ 500V | 18V | +22V, -4V |
