Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
54,440
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ON Semiconductor MOSFET P-CH 20V 6.8A MICROFET PowerTrench® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead Exposed Pad 8-MLP, MicroFET (3x2) 1.92W (Ta) P-Channel - 20V 6.8A (Tc) 30 mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30nC @ 4.5V 2200pF @ 10V 1.8V, 4.5V ±8V
ZXMNS3BM832TA
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RFQ
20,860
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Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-MLP, MicroFET (3x2) 1W (Ta) N-Channel Schottky Diode (Isolated) 30V 2A (Ta) 180 mOhm @ 1.5A, 4.5V 700mV @ 250µA 2.9nC @ 4.5V 314pF @ 15V 2.5V, 4.5V ±12V
ZXMNS3BM832TA
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RFQ
70,200
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Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-MLP, MicroFET (3x2) 1W (Ta) N-Channel Schottky Diode (Isolated) 30V 2A (Ta) 180 mOhm @ 1.5A, 4.5V 700mV @ 250µA 2.9nC @ 4.5V 314pF @ 15V 2.5V, 4.5V ±12V
ZXMNS3BM832TA
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RFQ
65,580
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Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-MLP, MicroFET (3x2) 1W (Ta) N-Channel Schottky Diode (Isolated) 30V 2A (Ta) 180 mOhm @ 1.5A, 4.5V 700mV @ 250µA 2.9nC @ 4.5V 314pF @ 15V 2.5V, 4.5V ±12V
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