Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BTS247ZE3062AATMA2
Per Unit
$1.00
RFQ
17,280
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 33A TO220-5 TEMPFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB PG-TO263-5-2 120W (Tc) N-Channel Temperature Sensing Diode 55V 33A (Tc) 18 mOhm @ 12A, 10V 2V @ 90µA 90nC @ 10V 1730pF @ 25V 4.5V, 10V ±20V
BTS244ZE3062AATMA2
Per Unit
$1.08
RFQ
57,440
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 35A TO220-5 TEMPFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB PG-TO263-5-2 170W (Tc) N-Channel Temperature Sensing Diode 55V 35A (Tc) 13 mOhm @ 19A, 10V 2V @ 130µA 130nC @ 10V 2660pF @ 25V 4.5V, 10V ±20V
BTS247Z E3062A
GET PRICE
RFQ
15,000
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 33A TO220-5 TEMPFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-5, D²Pak (4 Leads + Tab), TO-263BB PG-TO263-5-2 120W (Tc) N-Channel Temperature Sensing Diode 55V 33A (Tc) 18 mOhm @ 12A, 10V 2V @ 90µA 90nC @ 10V 1730pF @ 25V 4.5V, 10V ±20V
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