- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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69,560
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 90W (Tc) | N-Channel | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 10V | ±20V | |||
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36,920
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 90W (Tc) | N-Channel | 500V | 18A (Ta) | 270 mOhm @ 10A, 10V | 4V @ 1mA | 80nC @ 10V | 3720pF @ 10V | 10V | ±30V | |||
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16,340
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 14A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 80W (Tc) | N-Channel | 500V | 14A (Ta) | 400 mOhm @ 7A, 10V | 4V @ 1mA | 58nC @ 10V | 2600pF @ 10V | 10V | ±30V | |||
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78,860
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 8A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 85W (Tc) | N-Channel | 900V | 8A (Ta) | 1.4 Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | 10V | ±30V |