Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.06
RFQ
32,060
One step to sell excess stocks.Or submit Qty to get quotes
Diodes Incorporated MOSFET P-CH 20V 530MA X2DFN0604 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN X2-DFN0604-3 820mW (Ta) P-Channel 20V 530mA (Ta) 1.9 Ohm @ 100mA, 4.5V 1V @ 250µA 0.4nC @ 4.5V 28.7pF @ 15V 1.5V, 4.5V ±8V
Default Photo
Per Unit
$0.06
RFQ
68,680
One step to sell excess stocks.Or submit Qty to get quotes
Diodes Incorporated MOSFET N-CH 20V 750MA X2DFN0604 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN X2-DFN0604-3 840mW (Ta) N-Channel 20V 750mA (Ta) 990 mOhm @ 100mA, 4.5V 1V @ 250µA 0.41nC @ 4.5V 31pF @ 15V 1.5V, 4.5V ±8V
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