Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
72,540
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Renesas Electronics America MOSFET N-CH 30V 45A LFPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 5-LFPAK 25W (Tc) N-Channel 30V 45A (Ta) 3.8 mOhm @ 22.5A, 10V 27nC @ 4.5V 4400pF @ 10V 4.5V, 10V ±20V
RJK0301DPB-02#J0
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RFQ
30,860
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Renesas Electronics America MOSFET N-CH 30V 60A 5-LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 5-LFPAK 65W (Tc) N-Channel 30V 60A (Ta) 2.8 mOhm @ 30A, 10V 32nC @ 4.5V 5000pF @ 10V 4.5V, 10V +16V, -12V
RJK0301DPB-02#J0
Per Unit
$1.41
RFQ
57,960
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Renesas Electronics America MOSFET N-CH 30V 60A 5-LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 5-LFPAK 65W (Tc) N-Channel 30V 60A (Ta) 2.8 mOhm @ 30A, 10V 32nC @ 4.5V 5000pF @ 10V 4.5V, 10V +16V, -12V
RJK0301DPB-02#J0
Per Unit
$0.59
RFQ
24,580
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 30V 60A 5-LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 5-LFPAK 65W (Tc) N-Channel 30V 60A (Ta) 2.8 mOhm @ 30A, 10V 32nC @ 4.5V 5000pF @ 10V 4.5V, 10V +16V, -12V
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