Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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54,360
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Microsemi Corporation MOSFET N-CH Military, MIL-PRF-19500/543 Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE (TO-3) 4W (Ta), 150W (Tc) N-Channel 500V 12A (Tc) 500 mOhm @ 12A, 10V 4V @ 250µA 120nC @ 10V - 10V ±20V
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35,340
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Microsemi Corporation MOSFET N-CH Military, MIL-PRF-19500/543 Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE (TO-3) 4W (Ta), 150W (Tc) N-Channel 400V 14A (Tc) 400 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V - 10V ±20V
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19,520
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Microsemi Corporation MOSFET N-CH TO-204AE TO-3 Military, MIL-PRF-19500/543 Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE (TO-3) 4W (Ta), 150W (Tc) N-Channel 500V 12A (Tc) 500 mOhm @ 12A, 10V 4V @ 250µA 120nC @ 10V - 10V ±20V
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