Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$12.09
RFQ
21,480
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 800V 25A ISO264 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISO264™ 250W (Tc) N-Channel - 800V 25A (Tc) 150 mOhm @ 9A, 10V 4V @ 2mA 166nC @ 10V - 10V ±20V
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Per Unit
$11.49
RFQ
27,380
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 500V 48A ISO264 HiPerFET™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole ISO264™ 400W (Tc) N-Channel - 500V 48A (Tc) 90 mOhm @ 27.5A, 10V 4.5V @ 8mA 330nC @ 10V 9400pF @ 25V 10V ±20V
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