- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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23,920
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Infineon Technologies | MOSFET N-CH 150V 21A SUPER D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | Surface Mount | SUPER D2-PAK | - | N-Channel | - | 150V | 21A (Ta) | - | - | - | - | - | - | |||
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44,920
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Infineon Technologies | MOSFET N-CH 40V 185A SUPER D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | Surface Mount | SUPER D2-PAK | 300W (Tc) | N-Channel | - | 40V | 185A (Tc) | 4.5 mOhm @ 110A, 10V | 1V @ 250µA | 140nC @ 4.5V | 7660pF @ 25V | 4.5V, 10V | ±16V | |||
|
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76,420
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Infineon Technologies | MOSFET N-CH 30V 260A SUPER D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | Surface Mount | SUPER D2-PAK | 3.8W (Ta), 300W (Tc) | N-Channel | - | 30V | 260A (Tc) | 2.5 mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | 7V, 10V | ±20V |