Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFBL3315
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RFQ
23,920
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Infineon Technologies MOSFET N-CH 150V 21A SUPER D2PAK - Obsolete Tube MOSFET (Metal Oxide) Surface Mount SUPER D2-PAK - N-Channel - 150V 21A (Ta) - - - - - -
IRLBL1304
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RFQ
44,920
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Infineon Technologies MOSFET N-CH 40V 185A SUPER D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) Surface Mount SUPER D2-PAK 300W (Tc) N-Channel - 40V 185A (Tc) 4.5 mOhm @ 110A, 10V 1V @ 250µA 140nC @ 4.5V 7660pF @ 25V 4.5V, 10V ±16V
IRFBL3703
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RFQ
76,420
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Infineon Technologies MOSFET N-CH 30V 260A SUPER D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) Surface Mount SUPER D2-PAK 3.8W (Ta), 300W (Tc) N-Channel - 30V 260A (Tc) 2.5 mOhm @ 76A, 10V 4V @ 250µA 209nC @ 10V 8250pF @ 25V 7V, 10V ±20V
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