4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIE860DF-T1-E3
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RFQ
43,240
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Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (M) 5.2W (Ta), 104W (Tc) N-Channel - 30V 60A (Tc) 2.1 mOhm @ 21.7A, 10V 2.5V @ 250µA 105nC @ 10V 4500pF @ 15V 4.5V, 10V ±20V
SIE860DF-T1-GE3
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RFQ
55,420
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Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (M) 5.2W (Ta), 104W (Tc) N-Channel - 30V 60A (Tc) 2.1 mOhm @ 21.7A, 10V 2.5V @ 250µA 105nC @ 10V 4500pF @ 15V 4.5V, 10V ±20V
SIE860DF-T1-GE3
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RFQ
75,200
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Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (M) 5.2W (Ta), 104W (Tc) N-Channel - 30V 60A (Tc) 2.1 mOhm @ 21.7A, 10V 2.5V @ 250µA 105nC @ 10V 4500pF @ 15V 4.5V, 10V ±20V
SIE860DF-T1-GE3
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RFQ
78,280
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 30V 60A POLARPAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PolarPAK® (M) 5.2W (Ta), 104W (Tc) N-Channel - 30V 60A (Tc) 2.1 mOhm @ 21.7A, 10V 2.5V @ 250µA 105nC @ 10V 4500pF @ 15V 4.5V, 10V ±20V
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